Qin Lei and members of the Power Electronics Lab is working to accelerate the development and deployment of a new class of efficient, lightweight and reliable high-power, high-voltage power converters (>10 kV, >1 MW) based on the series and parallel connected low-voltage, wide-bandgap semiconductors. Her work is supported by a $500,000, five-year National Science Foundation Faculty Early Career Development Program (CAREER) Award.

Objective

Develop a high-voltage switch block of series-connected SiC MOSFETs using current source gate driver and snubber circuit for medium voltage drive and high power converter applications.

Features

  1. Dynamic Vds voltage sharing.
    • highly synchronized gate signals by special current-source gate driver design;
    • snubber circuit design;
  2. High efficiency & High voltage:
    • SiC MOSFET has much lower switching loss than IGBT and higher voltage than GaN HEMT.

Applications

Medium voltage drive and HVDC