Qin Lei and members of the Power Electronics Lab is working to accelerate the development and deployment of a new class of efficient, lightweight and reliable high-power, high-voltage power converters (>10 kV, >1 MW) based on the series and parallel connected low-voltage, wide-bandgap semiconductors. Her work is supported by a $500,000, five-year National Science Foundation Faculty Early Career Development Program (CAREER) Award.
Develop a high-voltage switch block of series-connected SiC MOSFETs using current source gate driver and snubber circuit for medium voltage drive and high power converter applications.
- Dynamic Vds voltage sharing.
- highly synchronized gate signals by special current-source gate driver design;
- snubber circuit design;
- High efficiency & High voltage:
- SiC MOSFET has much lower switching loss than IGBT and higher voltage than GaN HEMT.
Medium voltage drive and HVDC